Von Pezold, J and Bristowe, PD (2005) Atomic structure and electronic properties of the GaN/ZnO(0001) interface. In: UNSPECIFIED.
Full text not available from this repository.Abstract
The stability and electronic structure of cation- and anion-compensated interfaces between (0001) lattice-matched slabs of GaN and ZnO have been considered. It was found that, irrespective of interfacial polarity, cation-compensated interfaces are by approximately 20 meV/unit cell more stable than the corresponding anion-compensated interfaces. Valence band offsets of 1.0 and 0.5 eV have been found at the cation- and anion-compensated interfaces, respectively.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Uncontrolled Keywords: | optical-properties growth devices quality gan molecular-beam epitaxy light-emitting-diodes ingan zno |
| Subjects: | UNSPECIFIED |
| Divisions: | UNSPECIFIED |
| Depositing User: | Unnamed user with email sms67@eng.cam.ac.uk |
| Date Deposited: | 05 Mar 2014 14:41 |
| Last Modified: | 17 Jun 2021 15:41 |
| DOI: | 10.1007/s10853-005-2664-6 |
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