Lennard-Jones Centre for Computational Materials Science

Atomic structure and electronic properties of the GaN/ZnO(0001) interface

Von Pezold, J and Bristowe, PD (2005) Atomic structure and electronic properties of the GaN/ZnO(0001) interface. In: UNSPECIFIED.

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Abstract

The stability and electronic structure of cation- and anion-compensated interfaces between (0001) lattice-matched slabs of GaN and ZnO have been considered. It was found that, irrespective of interfacial polarity, cation-compensated interfaces are by approximately 20 meV/unit cell more stable than the corresponding anion-compensated interfaces. Valence band offsets of 1.0 and 0.5 eV have been found at the cation- and anion-compensated interfaces, respectively.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: optical-properties growth devices quality gan molecular-beam epitaxy light-emitting-diodes ingan zno
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@eng.cam.ac.uk
Date Deposited: 05 Mar 2014 14:41
Last Modified: 05 Jan 2021 11:19
DOI: 10.1007/s10853-005-2664-6

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