Lennard-Jones Centre for Computational Materials Science

Stacking fault energies in Si doped GaN: A first principles study

Chisholm, JA and Bristowe, PD (2000) Stacking fault energies in Si doped GaN: A first principles study. APPL PHYS LETT, 77. pp. 534-536. ISSN 0003-6951

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Item Type: Article
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Depositing User: Unnamed user with email sms67@eng.cam.ac.uk
Date Deposited: 05 Mar 2014 14:41
Last Modified: 10 Dec 2020 10:18
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