Lennard-Jones Centre for Computational Materials Science

The effect of Si on the growth mode of GaN

von Pezold, J and Oliver, RA and Kappers, MJ and Bristowe, PD and Humphreys, CJ (2006) The effect of Si on the growth mode of GaN. In: UNSPECIFIED.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: 000(1)OVER-BAR SURFACES GAN(0001) SILICON
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@eng.cam.ac.uk
Date Deposited: 05 Mar 2014 14:41
Last Modified: 13 Apr 2021 11:32
DOI: 10.1002/pssc.200565307

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