Lennard-Jones Centre for Computational Materials Science

Electronic structure of a Bi-doped Sigma=13 tilt grain boundary in ZnO

Carlsson, JM and Domingos, HS and Hellsing, B and Bristowe, PD (2001) Electronic structure of a Bi-doped Sigma=13 tilt grain boundary in ZnO. In: UNSPECIFIED.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: grain boundaries impurities segregation varistors DFT-calculations VARISTORS PHASE SEMICONDUCTORS SOLIDS
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@eng.cam.ac.uk
Date Deposited: 05 Mar 2014 14:42
Last Modified: 17 Jun 2021 15:40
DOI:

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