Lennard-Jones Centre for Computational Materials Science

Ab initio study of the effect of doping on stacking faults in GaN

Chisholm, JA and Bristowe, PD (2001) Ab initio study of the effect of doping on stacking faults in GaN. In: UNSPECIFIED.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: computer simulation doping planar defects nitrides semiconducting gallium compounds ELECTRONIC-STRUCTURE FIRST PRINCIPLES ENERGIES
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Unnamed user with email sms67@eng.cam.ac.uk
Date Deposited: 05 Mar 2014 14:41
Last Modified: 17 Jun 2021 15:40
DOI:

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